Semiconductor Wafer Processing Furnaces

SOLUTIONS FOR ADVANCED TECHNOLOGIES ECM Greentech manufactures semiconductor wafer processing furnaces for diffusion, oxidation, doping, and other processes in wafer and cell manufacturing (4”, 6”, 8” and 12” wafers).

 

For information on rapid thermal processing and direct liquid systems for research production applications in silicon/compound semiconductors, view our other ECM Greentech brands: Jipelec for entry level RTP/RTA systems and Annealsys for advanced configurations and ALD/DLI.

Robotic & Wafer Transfer

• Common central robotic arm for up to 8 tubes (two 4T furnaces front to front)
• Configurable multi-wafer transfers (6’’, 8’’, back-to-back, etc.)
• Configurable multi-process avoiding cross contamination with dedicated WTS and boat grippers (change tool option)

Learn more about ECM Heat Treat Robotics & automation integration

PROCESSES DF SERIES TUBESTAR MEMSLAB
ATMOSPHERIC PRESSURE • Dry oxydation with O2
• Pyrolithic oxidation with H2/O2 torch
• Wet Oxide with Pure DI water steamer
• Boron or phosphorous dope with liquid, solid or gas source
• High temperature diffusion of P or P junction
• Low temperature Annealing, Sinter, Alloy
• Dry oxydation with O2
• Pyrolithic oxidation with H2/O2 torch
• Wet Oxide with Pure DI water steamer
• Boron or phosphorous dope with liquid, solid or gas source
• High temperature diffusion of P or P junction
• Low temperature Annealing, Sinter, Alloy
• SiNx
• SiO2
• SiOxNy
• SiC
• SiCxNy
• a-Si (intrinsic or p/n doped)
• PSG
• BSG
• BPSG
• AlxOy
• More layers
• In-Situ Cleaning / surface etching
LOW CoO REDUCED PRESSURE • LYDOP phosphorous dope with POCl3 or PH3
• LYDOP boron dope with BCl3
• LYSINTER forming gas to 100% H2 annealing
• LYTOX dry or wet extreme precision oxides
• LYDOP phosphorous dope with POCl3 or PH3
• LYDOP boron dope with BCl3
• LYSINTER forming gas to 100% H2 annealing
• LYTOX dry or wet extreme precision oxides
LOW PRESSURE CVD • LPCVD Nitride: Stochiometric, Low-Stress, Oxynitride
• LPCVD Poly: Flat, Intrinsic or p/n-doped
• LPCVD a-Si: Amorphous, Low-Stress
• LPCVD SiPOS & MTO
• LPCVD 3C-SiC
• LPCVD Si on Sapphire
• LPCVD TEOS: Undoped, PSG/BPSG, Conformal
• LPCVD LTO: Undoped, PSG/BPSG
• LPCVD HTO
• LPCVD Tungsten
• LPCVD Nitride: Stochiometric, Low-Stress, Oxynitride
• LPCVD Poly: Flat, Intrinsic or p/n-doped
• LPCVD a-Si: Amorphous, Low-Stress
• LPCVD SiPOS & MTO
• LPCVD 3C-SiC
• LPCVD Si on Sapphire
• LPCVD TEOS: Undoped, PSG/BPSG, Conformal
• LPCVD LTO: Undoped, PSG/BPSG
• LPCVD HTO
• LPCVD Tungsten



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