Semiconductor Wafer Processing Furnaces

SOLUTIONS FOR ADVANCED TECHNOLOGIES ECM Greentech manufactures semiconductor furnaces for diffusion, oxidation, doping, and other processes in wafer and cell manufacturing (4”, 6”, 8” and 12” wafers) under the brand name SEMCO.

DF Series: Batch-Type Horizontal Tube Furnace

DF-Series are ECM Greentech batch-type, horizontal tubular furnaces for mass-production. Key characteristics of this furnace line are: precision semiconductor processing combined with industrial process control, integration modularity, and a user-friendly interface. Each populated chamber can be independently configured and operated in a large range of atmospheric, sub-atmospheric or low pressure processes. The DF furnaces can also handle multiple gases and liquid precursors with a temperature range from 200 to 1300°C. Its modular design allows to meet a large range of clean thermal treatment for industrial facilities. Learn More

Tubestar: Batch-Type Horizontal Tube Furnace

The Tubestar solution is the compact batch-type, single or multi-chambers horizontal furnace offered by ECM Greentech. Key characteristics of this furnace line are: high precision semiconductor processing combined with industrial process control, integration modularity, and a user-friendly interface. Each populated chamber can be independently configured and operated in a large range of atmospheric, sub-atmospheric or low pressure processes. The TubeStar furnace can also handle multiple gases and liquid precursors with a temperature range from 200 to 1300°C. Its modular design allows to meet a large range of clean thermal treatment for universities, research laboratories, or small production facilities. Learn More

MEMSLAB: Batch-Type Vertical Furnace

The MEMSLAB compact batch-type, single or multi-chambers vertical PECVD platform offered by ECM Greentech. The MEMSLAB is designed and built with high precision components, which allows for high quality thin film deposition. The applied Low Frequency Plasma feature permits the furnace to reach excellent process performance through a most advantageous horizontal thin substrate processing. This platform excels in the processing of small quantities of substrates; therefore, allowing the MEMSLAB to meet requirements of universities, research laboratories, or small production facilities. Learn More

 

For information on rapid thermal processing and direct liquid systems for research production applications in silicon/compound semiconductors, view our other ECM Greentech brands: Jipelec for entry level RTP/RTA systems and Annealsys for advanced configurations and ALD/DLI.

Robotic & Wafer Transfer

• Common central robotic arm for up to 8 tubes (two 4T furnaces front to front)
• Configurable multi-wafer transfers (6’’, 8’’, back-to-back, etc.)
• Configurable multi-process avoiding cross contamination with dedicated WTS and boat grippers (change tool option)

Learn more about ECM Heat Treat Robotics & automation integration

PROCESSES DF SERIES TUBESTAR MEMSLAB
ATMOSPHERIC PRESSURE • Dry oxydation with O2
• Pyrolithic oxidation with H2/O2 torch
• Wet Oxide with Pure DI water steamer
• Boron or phosphorous dope with liquid, solid or gas source
• High temperature diffusion of P or P junction
• Low temperature Annealing, Sinter, Alloy
• Dry oxydation with O2
• Pyrolithic oxidation with H2/O2 torch
• Wet Oxide with Pure DI water steamer
• Boron or phosphorous dope with liquid, solid or gas source
• High temperature diffusion of P or P junction
• Low temperature Annealing, Sinter, Alloy
• SiNx
• SiO2
• SiOxNy
• SiC
• SiCxNy
• a-Si (intrinsic or p/n doped)
• PSG
• BSG
• BPSG
• AlxOy
• More layers
• In-Situ Cleaning / surface etching
LOW CoO REDUCED PRESSURE • LYDOP phosphorous dope with POCl3 or PH3
• LYDOP boron dope with BCl3
• LYSINTER forming gas to 100% H2 annealing
• LYTOX dry or wet extreme precision oxides
• LYDOP phosphorous dope with POCl3 or PH3
• LYDOP boron dope with BCl3
• LYSINTER forming gas to 100% H2 annealing
• LYTOX dry or wet extreme precision oxides
LOW PRESSURE CVD • LPCVD Nitride: Stochiometric, Low-Stress, Oxynitride
• LPCVD Poly: Flat, Intrinsic or p/n-doped
• LPCVD a-Si: Amorphous, Low-Stress
• LPCVD SiPOS & MTO
• LPCVD 3C-SiC
• LPCVD Si on Sapphire
• LPCVD TEOS: Undoped, PSG/BPSG, Conformal
• LPCVD LTO: Undoped, PSG/BPSG
• LPCVD HTO
• LPCVD Tungsten
• LPCVD Nitride: Stochiometric, Low-Stress, Oxynitride
• LPCVD Poly: Flat, Intrinsic or p/n-doped
• LPCVD a-Si: Amorphous, Low-Stress
• LPCVD SiPOS & MTO
• LPCVD 3C-SiC
• LPCVD Si on Sapphire
• LPCVD TEOS: Undoped, PSG/BPSG, Conformal
• LPCVD LTO: Undoped, PSG/BPSG
• LPCVD HTO
• LPCVD Tungsten


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